Electrical characterization of Graphene Oxide films in Field Effect Transistor configuration

ORAL

Abstract

Electrical characterization of pyrolytic Graphene Oxide (GO) films (5.3% of oxidation), in configuration of field effect transistor (FET), is presented here. GO-FET´s were electrically characterized by the current-voltage method, varying temperature of 20 to 300 K; finding, a behavior of voltage-controlled current source and a high electrical mobility value of 1.2 x10 4 cm 2 /Vs at 300 K, as expected. Results revealed that decreases temperature, increases the electrical resistance and this behavior was described employing the 3D-VRH model. These results suggest that GO-FET is an attractive device to high-frequency commutation.

*This work was funded in part by Universidad del Quindío and MinCiencias project SGRBPIN: 2020000100600 internal code 1112.

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Presenters

  • Narly A Echeverry Montoya

    • Universidad del Quindio

Authors

  • Narly A Echeverry Montoya

    • Universidad del Quindio

  • J. J. Prias-Barragan

    • Universidad del Quindío
    • Universidad del Quindio
    • Interdisciplinary Institute of Sciences, Doctoral Program in Physical Science and Electronic Instrumentation Program at Universidad del Quindío, Colombia, 630004.

  • Carlos Perdomo Vela

    • Universidad del Quindio