Mapping out the topological phase diagram of FeSn

ORAL

Abstract

Kagome metals exhibit a flat band and a Dirac point in their electronic band structure. The combination of these electronic states with long range magnetic order creates favourable conditions to search for strongly correlated and topological quantum phases of matter. Transition metal based kagome materials have recently emerged as a promising material platform whose electronic and magnetic properties can be controlled by the stoichiometry and elemental composition. Owing to the reduced coupling between the two-dimensional kagome planes, the inter metallic kagome series X1Y1 offers particularly attractive opportunities to investigate the interplay between strong electronic correlations, topology, and magnetism.

We have combined molecular beam epitaxy with electrical transport measurements to study the interplay of magnetism and band topology in thin films of the antiferromagnetic kagome metal FeSn. We will present results from a magnetic field and temperature dependent study of the anomalous Hall effect using transverse resistivity measurements. Combining these measurements with magnetic Monte-Carlo simulations and theoretical model calculations, we map out the topological phase diagram of FeSn over a large temperature range.

*We gratefully acknowledge support by the Research Grant Council, and the Croucher Foundation.

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Presenters

  • Berthold Jaeck

    • The Hong Kong University of Science and Technology
    • HKUST

Authors

  • Berthold Jaeck

    • The Hong Kong University of Science and Technology
    • HKUST

  • Soumya Sankar

    • The Hong Kong University of Science and Technology
    • HKUST, Department of Physics, Clear Water Bay, Hongkong
    • HKUST

  • RUIZI LIU

    • HKUST, Department of Electrical Engineering, Clear Water Bay, Hongkong
    • HKUST
    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China

  • Chengping ZHANG

    • HKUST, Department of Physics, Clear Water Bay, Hongkong
    • The Hong Kong University of Science and Technology
    • HKUST

  • Qifang Li

    • HKU, Department of Physics, Pokfulam Road, Hong Kong and University of Tokyo, Department of Physics, Tokyo
    • HKUST, University of Tokyo

  • Jiangchang Zheng

    • The Hong Kong University of Science and Technology
    • HKUST, Department of Physics, Clear Water Bay, Hongkong
    • HKUST

  • Caiyun Chen

    • The Hong Kong University of Science and Technology
    • IAS,The Hong Kong University of Science and Technology,Hongkong
    • HKUST

  • KUN QIAN

    • HKUST, Department of Electrical Engineering, Clear Water Bay, Hongkong
    • HKUST
    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China

  • Zi Yang Meng

    • HKU, Department of Physics, Pokfulam Road, Hong Kong
    • The University of Hong Kong
    • Hong Kong University

  • Kam Tuen Law

    • HKUST, Department of Physics, Clear Water Bay, Hongkong
    • Hong Kong University of Science and Technology
    • HKUST

  • QIMING SHAO

    • HKUST, Department of Electrical Engineering, Clear Water Bay, Hongkong
    • HKUST
    • Hong Kong University of Science and Technology
    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China