Molecular beam epitaxy growth of correlated kagome metal Ni₃In

The past few years have seen a rapid development in material realizations of the kagome lattice model and its derived band structure singularities. A bulk single crystal study of an AB-stacked kagome metal Ni₃In has identified an emergent d-electron flat band associated with non-Fermi liquid behavior, understood to arise from the inter-kagome hybridization in its characteristic three-dimensional stacking network of kagome layers [1]. Here we report the stabilization of high quality epitaxial thin films of Ni₃In by molecular beam epitaxy [2]. Based on the electrical transport response, we discuss the relevance of spin fluctuations in generating the observed correlated behaviors. We will also propose various thin film engineering strategies for controlling the lattice-driven quantum criticality.