Electron anisotropy and its origin in twisted trilayer graphene

ORAL

Abstract

Using a new scheme of angle-resolved transport measurement, I will report the identification and characterization of electronic anisotropy in twisted trilayer graphene. Our measurement scheme not only extracts the conductivity matrix for the underlying electronic state, but it also offers direct characterization for the spatial homogeneity of the twisted trilayer graphene sample. By mapping out the evolution with the band-filling, temperature, and twist angle, the angle-resolved measurement provides a novel window into the role of Coulomb interaction and lattice distortion. Together, our findings point towards an underlying connection between electron anisotropy, cascade of isospin polarization transitions and the electronic order that breaks both parity and time-reversal symmetry. The influence of lattice distortion, while unavoidable in solid state samples, is of secondary importance.

*N.J.Z. acknowledge support from the Jun-Qi fellowship. J.I.A.L. acknowledge funding from NSF DMR2143384. K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan (Grant Number JPMXP0112101001) and JSPS KAKENHI (Grant Numbers 19H05790, 20H00354 and 21H05233).

Publication: Electronic anisotropy in magic-angle twisted trilayer graphene

Presenters

  • Yibang B Wang

    • Brown University

Authors

  • Yibang B Wang

    • Brown University
  • Naiyuan J Zhang

    • Brown University
  • Kenji Watanabe

    • National Institute for Materials Science
    • Research Center for Functional Materials, National Institute of Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • National Institute for Materials Science, Japan
    • Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
    • NIMS Japan
  • Takashi Taniguchi

    • National Institute for Materials Science
    • Kyoto Univ
    • International Center for Materials Nanoarchitectonics, National Institute of Materials Science
    • Kyoto University
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Science, Japan
    • National Institute For Materials Science
    • NIMS
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
    • NIMS Japan
  • Oskar Vafek

    • Florida State University
  • Jia Li

    • Brown University