First principles calculation of valley g-factors in transition metal dichalcogenide monolayers, with dynamical self-energy effects.

ORAL

Abstract

H-phase transition metal dichalcogenide (TMD) monolayers (MLs) have two distinct energy valleys, and are therefore promising for valleytronic applications, in which the valley degree of freedom is controlled for information storage and processing. In the presence of an out-of-plane magnetic field, the two valleys are shifted in opposite directions (the Zeeman effect), and reorganised into discrete equally-spaced levels (Landau Levels). The Zeeman effect is quantified by the Landé g-factor. Here, we develop an approach which provides quantitative predictions of the g-factors, taking into account many-body interactions from first principles.[Phys. Rev. Res. 2, 033256; npj Comput. Mater. 7, 198] We show that dynamical self-energy effects can significantly enhance the g-factors of doped ML TMDs, compared to undoped TMDs.[npj Comput. Mater. 7, 198] The predicted g-factors are in excellent agreement with experimentally-determined doping-density-dependent enhanced valley g-factors, g*.[Phys. Rev. Lett. 125, 147602] This enhancement effect is shown to orginate from the varying screened exchange interaction in response to the change of doping density in the two valleys. We predict the presence of a critical magnetic field after which this enhencement effect will disappear. Our calculated critical magnetic fields agree with recent experimental measurements.[Phys. Rev. Lett. 125, 147602]

*This work is supported by the NUS Provost's Office, the Ministry of Education (MOE 2017-T2-2-139), and the National Research Foundation (NRF), Singapore, under the NRF Fellowship (NRF-NRFF2013-07) and the NRF medium-sized center program. Calculations were performed on the computational cluster in the Centre for Advanced 2D Materials and the National Supercomputing Centre, Singapore.

Publication: F. Xuan and S. Y. Quek, Phys. Rev. Res. 2, 033256 (2020);
F. Xuan and S. Y. Quek, npj Comput. Mater. 7, 198 (2021)

Presenters

  • Fengyuan Xuan

    • Natl Univ of Singapore

Authors

  • Fengyuan Xuan

    • Natl Univ of Singapore
  • Su Ying Quek

    • National University of Singapore
    • Natl Univ of Singapore