Nanoscale programming of ferroelectric thin films using Ultra-low Voltage E-beam Lithography

ORAL

Abstract

The ability to control ferroelectric domains at nanoscale dimensions is essential for ferroelectric-based device fabrication, especially with atomically-thin films, and its impact extends further to nanoelectronics. Using direct irradiation from an ultra-low voltage electron beam1, nanoscale ferroelectric domains can be patterned on a pre-poled, out-of-plane polarization Al0.9B0.1N thin film on demand. Atomic-force microscope (AFM) and piezoelectric-force microscope (PFM) characterizations are carried out showing clear patterned domains with less than 50 nm resolution. It has been demonstrated previously that ULV-EBL can pattern LaAlO3/SrTiO3 heterostructures through the van der Waals (vdW) layers. Creating high-resolution ferroelectric patterns in proximity to vdW heterostructures can be used to create voltage-programmable nanostructures, taking advantage of the large (~1015 cm-2) switchable ferroelectric polarization.

1. Appl. Phys. Lett. 117, 253103 (2020)

*BH, JL, PI, and J-PM acknowledge support from the Department of Energy under grant DOE-QIS (DE-FOA-0002449).

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Presenters

  • Dengyu Yang

    • University of Pittsburgh
    • Pittsburgh Quantum Institute

Authors

  • Dengyu Yang

    • University of Pittsburgh
    • Pittsburgh Quantum Institute

  • John Hayden

    • The Pennsylvania State University

  • Qingrui Cao

    • Carnegie Mellon University

  • Muqing Yu

    • University of Pittsburgh

  • Erin Akyuz

    • Carnegie Mellon University

  • Patrick R Irvin

    • University of Pittsburgh

  • Benjamin M Hunt

    • Carnegie Mellon University

  • Jon-Paul Maria

    • Pennsylvania State University
    • The Pennsylvania State University

  • Jeremy Levy

    • University of Pittsburgh
    • Department of Physics and Astronomy, University of Pittsburgh