Probing Phonon-Dominated Transport in Sb<sub>2</sub>Se<sub>3</sub> Thin Films
ORAL
Abstract
In this work, we uncover the thermal conductivity (k) and thermal interface characteristics of sputtered Sb2Se3 on silicon from 10-60 nm in thickness, revealing a roughly two-fold increase of k to ~0.40 W/m/K when taken to 290oC for 60 nm films. Little change in k was found for 10 nm films in the same temperature range (~0.18-0.21 W/m/K). Electrical resistivity measurements suggests phonon-dominated transport, while resistive crossbar measurements (4,5) provide their electronic device behavior in an emerging computing platform. In summary, our detailed measurements reveal insights to accurately model and optimize photonic hardware based on the emerging material Sb2Se3.
*We acknowledge the support of the Laboratory Directed Research and Development program at Sandia National Laboratories, a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia LLC, a wholly owned subsidiary of Honeywell International Inc. for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525. Part of this work was performed at the Stanford Nano Shared Facilities (SNSF), supported by the National Science Foundation underaward ECCS-1542152).
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Publication: 1. Abdollahramezani et al., Nanophotonics 9, 1189–1241 (2020).
2. Zhang et al., Nat. Photonics 10, 4279 (2019).
3. Delaney et al., Adv. Funct. Mater. 30, 2002447 (2020).
4. Taha et al., The 2013 IJCNN, 2013, 1, Dallas, TX, USA.
5. Hasan et al., arxiv:org/ abs/1606.04609, (2016).
Presenters
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Christopher Perez
- Stanford University, USA
- Stanford University
- Mechanical Engineering, Stanford University