Configurable crack wall conduction in oxide nanoelectronics

Mobile defects in solid-state materials play a significant role in memristive switching and energy-efficient neuromorphic computation. Techniques for confining and manipulating point defects may have great promise for low-dimensional memories. Here, we report the spontaneous gathering of oxygen vacancies at strain-relaxed crack walls in SrTiO₃ thin films grown on DyScO₃ substrates as a result of flexoelectricity. We found that electronic conductance at the crack walls was enhanced compared to the crack-free region, by a factor of 10⁴. A switchable asymmetric diode-like feature was also observed, and the mechanism is discussed, based on the electrical migration of oxygen vacancy donors in the background of Sr-deficient acceptors forming n⁺-n or n-n⁺ junctions. By tracing the temporal relaxations of surface potential and lattice expansion of a formed region, we determine the diffusivity of mobile defects is consistent with oxygen vacancy kinetics of SrTiO3 (1.4×10-16 cm²/s). Our finding opens a new avenue into defect-mediated crack wall nanoelectronics.