Electrical and optical manipulation of telecom band Si color centers in p-i-n light emitting diode like structures

ORAL

Abstract

We report the electrical and optical manipulation of telecom band color centers in a Si based p-i-n type light emitting diode (LED) structure that was fabricated using laser-plasma driven ion implantation. In this approach, a petawatt laser is employed to generate a high flux, high energy beam of B ions which are used to dope an n-type Si substrate (~1.4x1022 B/cm3 observed). Photoluminescence and electroluminescence from W, G and C centers were observed on the same sample at the same spot along with first experimental observation of Stark shift from W center while the device was under reverse bias. This would enable electrical control of resonance between quantum emitter and photonic crystal cavity. This new ion implantation approach not only allows fabrication of LED type structures in a single step but also forms the color centers without the requirement of post implantation annealing due to its dual pulse behavior. Silicon doped with high concentrations of B can also form a superconducting phase and we will also present results from temperature dependent resistivity measurements.

*This work at Berkeley Lab was supported by the Office of science, Office of Fusion Energy Sciences, of the U.S. DOE, under Contract No. DE-AC02-05CH11231.The results presented here are based on an experiment performed at the PHELIX facility at the GSI, Darmstadt (Germany) in the framework of the FAIR Phase-0 program.C.P. was supported by the Onassis Foundation - Scholarship ID: F ZR 045-1/2021-2022

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Presenters

  • Kaushalya Jhuria

    • Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
    • Lawrence Berkeley National Laboratory

Authors

  • Kaushalya Jhuria

    • Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
    • Lawrence Berkeley National Laboratory

  • Arun Persaud

    • Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
    • Lawrence Berkeley National Laboratory

  • Qing Ji

    • Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
    • Lawrence Berkeley National Laboratory

  • Wei Liu

    • Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
    • ATAP, Lawrence Berkeley National Lab

  • Walid Redjem

    • Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA
    • University of California, Berkeley
    • University of California Berkeley

  • Yertay Zhiyenbayev

    • Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA
    • University of California, Berkeley

  • Christos Papapanos

    • Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA
    • University of California Berkeley

  • Zhihao Qin

    • Lawrence Berkeley National Laboratory

  • Sara Saib

    • Lawrence Berkeley National Laboratory

  • Vsevolod Ivanov

    • Lawrence Berkeley National Lab
    • Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
    • Lawrence Berkeley National Laboratory

  • Vincent Bagnoud

    • GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt, Germany

  • Johannes Hornung

    • GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt, Germany

  • Pascal Boller

    • GSI Helmholtzzentrum für Schwerionenforschung GmbH, Planckstraße 1, 64291 Darmstadt, Germany ; Technische Universität Darmstadt, Institut für Kernphysik, Schloßgartenstraße 9

  • Xinran Li

    • Lawrence Berkeley National Laboratory

  • Lieselotte Obst-Huebl

    • Lawrence Berkeley National Laboratory

  • Liang Tan

    • Lawrence Berkeley National Laboratory
    • Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
    • Lawrence Berkeley National Laboratory,USA

  • Boubacar Kante

    • Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA
    • University of California, Berkeley
    • University of California Berkeley

  • Thomas Schenkel

    • Lawrence Berkeley National Laboratory
    • Accelerator Technology and Applied Physics Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA