Development of nano-electronics/photonics aligned with silicon color centers

The position of silicon color centers (CCs) are optically mapped relative to metallized alignment marks, as we seek sub-100 nm alignment of post-fabricated electronic and photonic devices. Precise alignment of the CCs enables classical and potentially quantum coupling to electronic and photonic systems, which could yield significant advancements for quantum communications and single photon technologies in silicon. Sub-50 nm alignment of CCs to electronic and photonic components is estimated to enable strong coupling in these devices. This talk will present progress on mapping single silicon color centers synthesized through implant masks on SOI (silicon-on-insulator) relative to a lithographically defined system of metal coordinate marks and CC implant masks. The vectors of individual color centers will then be used to place additional metal features using electron beam lithography, e.g., CC-in-circle, and re-mapped to evaluate the precision of the alignment scheme.