Electronic states in semiconductor truncated ellipsoidal quantum dots

Electronic states in a GaAs truncated ellipsoidal quantum dot (QD) are theoretically investigated within the framework of the geometric adiabatic approximation both in the strong and weak quantum confinement regimes. For the lower levels of the spectrum, the localization of the electron in the vicinity of the QD center-of-gravity is proved. Lowering the QD ellipsoidal symmetry leads to the appearance of an atypical linear term in the effective confining potential. For the weak quantum confinement regime, the motion of the exciton's center-of-gravity is quantized, which leads to the appearance of additional Coulomb sub-levels. The corresponding selection rules of quantum transitions for the interband absorption of light are obtained. The absorption threshold behavior characteristics depending on the QDs geometrical sizes are also revealed.