Tailoring electronic properties of NbSe₂ by Cr intercalation via molecular-beam epitaxy

One of the layered compound families, transition metal dichalcogenide (TMD), shows a variety of intriguing physical properties including superconductivity, charge-density waves, and topological properties, depending on the combination of transition metals and chalcogens. Moreover, intercalating atoms into the van der Waals gap of TMD could provide another degree of freedom. In particular, intercalating transition metals could provide a rich variety of magnetic properties depending on the combination of host TMD and intercalant elements as well as the in-plane arrangement of the intercalant atoms within the van der Waals gap. In this study, we focus on the electronic properties of the Cr-intercalated NbSe₂ epitaxial thin films grown by molecular-beam epitaxy and demonstrate its systematic evolution depending on the intercalation level through magnetization and transport measurements.