Strong electron-phonon coupling in Ta<sub>2</sub>Ni(Se,S)<sub>5</sub> across the semimetal-semiconductor transition
ORAL
Abstract
During a band-gap tuned semimetal-to-semiconductor transition, the excitonic instability of the system, the spontaneous formation of electron-hole bound pairs via direct Coulomb attraction, often peaks when the bandgap crosses zero. However, such excitonic phase diagram can be altered in the presence of strong electron-phonon coupling. Here, via angle-resolved photoemission spectroscopy (ARPES) and high-resolution synchrotron x-ray diffraction (XRD), we report a monotonically suppressed broken-symmetry phase boundary across the semimetal-semiconductor transition in a leading excitonic insulator candidate system Ta2Ni(Se,S)5. Bolstered by first principles and model calculations, strong electron-phonon coupling is shown to substantially enhance the symmetry-breaking on the semimetal side, leading to negative electronic compressibility, pervasive lattice fluctuation, and a persistently gapped ground state. Our results not only resolve the longstanding debate about the nature of the intertwined order in Ta2NiSe5, but also lay the groundwork to a new solid-state platform for the investigation of excitonic instability amid electron-phonon solid coupling.
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Publication: C. Chen et al. arXiv:2203.06817 (2022)
C. Chen et al. in preparation
Presenters
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Cheng Chen
- University of Oxford