Robust room-temperature Valley Polarization in graphite-filtered WS<sub>2</sub> monolayers

ORAL

Abstract

Transition metal dichalcogenide (TMD) monolayers (1L) in the 2H-phase are 2D semiconductors with two valleys in their band structure that can be selectively populated using circularly polarized light. The choice of the substrate is an essential factor for the optoelectronic properties and for achieving a high degree of valley polarization at room temperature (RT). In this work, we investigate the RT valley polarization of 1L-WS2 on different substrates. A polarization degree of 27% is measured from neutral excitons in 1L-WS2/graphite at RT, under resonant excitation. Using photochlorination doping, we modulate the polarization of the neutral exciton emission from 27% to 38% for this system. We show that the valley polarization strongly depends on the interplay between doping and the choice of the supporting layer of TMDs. Time-resolved photoluminescence measurements, corroborated by a rate equation model accounting for the bright exciton population in the presence of a dark exciton reservoir, support our findings. These results suggest a pathway towards engineering valley polarization and exciton lifetimes in TMDs, by controlling the carrier density and/or the dielectric environment at ambient conditions.

*This work is supported by the Hellenic Foundation for Research and Innovation (H.F.R.I.) under the "First Call for H.F.R.I. Research Projects to support Faculty members and Researchers and the procurement of high-cost research equipment grant" project No: HFRI-FM17-3034

Presenters

  • George Kioseoglou

    • FORTH/IESL
    • FORTH/IESL and University of Crete

Authors

  • George Kioseoglou

    • FORTH/IESL
    • FORTH/IESL and University of Crete
  • Ioanna Demeridou

    • FORTH/IESL and University of Crete
  • M. Mavrotsoupakis

    • FORTH/IESL and University of Crete
  • L. Mouchliadis

    • Foundation for Research and Technology Hellas
    • FORTH/IESL
  • P.G. Savvidis

    • FORTH/IESL and University of Crete
  • E. Stratakis

    • Institute of Electronic Structure FORTH
    • FORTH/IESL and University of Crete