Superconducting resonators with voltage-controlled frequency and nonlinearity
ORAL
Abstract
Voltage-tunable superconductor-semiconductor devices offer a unique platform to realize dynamic tunability in superconducting quantum circuits. By galvanically connecting a gated InAs-Al Josephson junction to a coplanar waveguide resonator, we demonstrate the use of a superconducting element with wideband gate-tunability. We show that the resonant frequency is controlled via a gate-tunable Josephson inductance and that the non-linearity of the InAs-Al junction is non-dissipative as is the case with conventional AlOx-Al junctions. As the gate voltage is decreased, the inductive participation of the junction increases up to 44%, resulting in the resonant frequency being tuned by over 2 GHz. Utilizing the wide tunability of the device, we demonstrate that two resonant modes can be adjusted such that they strongly hybridize, exhibiting an avoided level crossing with a coupling strength of 51 MHz. Implementing such voltage-tunable resonators is the first step toward realizing wafer-scale continuous voltage control in superconducting circuits for qubit-qubit coupling, quantum-limited amplifiers, and quantum memory platforms.
*The authors acknowledge support from the Army Research Office agreement W911NF2110303. The N.Y.U. team acknowledges support from the Army Research Office agreement W911NF2210048 and from the National Science Foundation agreement 2340-206-2014878 A01. W.M.S. acknowledges funding from the ARO/LPS QuaCR Graduate Fellowship. W.F.S. acknowledges funding from the NDSEG Fellowship.
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Publication: https://arxiv.org/abs/2210.02491
Presenters
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William M Strickland
- New York University (NYU)