Defects in Gallium Oxide

FOCUS · B41 · ID: 1067030

Presentations

  • ORAL

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    Presenters

    • Siavash Karbasizadeh

      • University of California, Santa Barbara

    Authors

    • Siavash Karbasizadeh

      • University of California, Santa Barbara

    • Sai Mu

      • University of South Carolina

    • Chris G Van de Walle

      • University of California, Santa Barbara

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  • ORAL

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    Presenters

    • Blair Tuttle

      • Penn State Univ, Erie

    Authors

    • Blair Tuttle

      • Penn State Univ, Erie

    • Nathaniel Karom

      • Allegheny College

    • Andrew O'Hara

      • Department of Physics and Astronomy, Vanderbilt University
      • Vanderbilt University

    • Ronald D Schrimpf

      • Department of Electrical and Computer Engineering, Vanderbilt University
      • Vanderbilt University

    • Sokrates T Pantelides

      • Vanderbilt University
      • Vanderbilt Univ
      • Department of Physics and Astronomy, Vanderbilt University

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  • ORAL

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    Publication: M. Schubert et al., Appl. Phys Lett. 120, 102101(2022).

    Presenters

    • Mathias M Schubert

      • University of Nebraska-Lincoln
      • University of Nebraska - Lincoln

    Authors

    • Mathias M Schubert

      • University of Nebraska-Lincoln
      • University of Nebraska - Lincoln

    • Rafal Korlacki

      • University of Nebraska - Lincoln

    • Steffen Richter

      • Lund University

    • Sean Knight

      • Lund University

    • Philipp Kuehne

      • Linkoping University

    • Vallery Stanishev

      • Lund University

    • Megan Stokey

      • University of Nebraska-Lincoln

    • Zbigniew Galazka

      • Leibniz-Institut für Kristallzüchtung
      • Leibniz Institute for Crystal Growth

    • Klaus Irmscher

      • Leibniz Institute for Crystal Growth

    • Vanya Darakchieva

      • Linköping University
      • Lund University

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  • ORAL

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    Publication: 1. F. Alema, Y. Zhang, A. Osinsky, N. Valente, A. Mauze, T. Itoh, and J. S. Speck, "Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown b-Ga2O3," APL Mater. 7, 121110 (2019).
    2. Z. Feng, A. F. Anhar Uddin Bhuiyan, M. R. Karim, and H. Zhao, "MOCVD homoepitaxy of Si-doped (010) b-Ga2O3 thin films with superior transport properties," Appl. Phys. Lett. 114, 250601 (2019).
    3. Y. Zhang, F. Alema, A. Mauze, O. S. Koksaldi, R. Miller, A. Osinsky, and J. S. Speck, "MOCVD grown epitaxial b-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature," APL Mater. 7, 022506 (2019).
    4. S. Rafique, M. R. Karim, J. M. Johnson, J. Hwang, and H. Zhao, "LPCVD homoepitaxy of Si doped b-Ga2O3 thin films on (010) and (001) substrates," Appl. Phys. Lett. 112, 052104 (2018).
    5. M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, D. Klimm, R. Schewski, and G. Wagner, "Semiconducting Sn-doped b-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy," J. Mater. Sci. 51, 3650–3656 (2016).
    6. M. Baldini, M. Albrecht, A. Fiedler, K. Irmscher, R. Schewski, and G. Wagner, "Si- and Sn-doped homoepitaxial b-Ga2O3 layers grown by MOVPE on (010)- oriented substrates," ECS J. Solid State Sci. Technol. 6, Q3040 (2017).
    7. K. D. Leedy, K. D. Chabak, V. Vasilyev, D. C. Look, J. J. Boeckl, J. L. Brown, S. E. Tetlak, A. J. Green, N. A. Moser, A. Crespo, D. B. Thomson, R. C. Fitch, J. P. McCandless, and G. H. Jessen, "Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) b-Ga2O3 by pulsed laser deposition," Appl. Phys. Lett. 111, 012103 (2017).
    8. N. K. Kalarickal, Z. Xia, J. McGlone, S. Krishnamoorthy, W. Moore, M. Brenner, A. R. Arehart, S. A. Ringel, and S. Rajan, "Mechanism of Si doping in plasma assisted MBE growth of b-Ga2O3," Appl. Phys. Lett. 115, 152106 (2019).
    9. E. Ahmadi, O. S. Koksaldi, S. W. Kaun, Y. Oshima, D. B. Short, U. K. Mishra, and J. S. Speck, "Ge doping of b-Ga2O3 films grown by plasma-assisted molec- ular beam epitaxy," Appl. Phys. Express 10, 041102 (2017).
    10. N. Moser, J. McCandless, A. Crespo, K. Leedy, A. Green, A. Neal, S. Mou, E. Ahmadi, J. Speck, K. Chabak, N. Peixoto, and G. Jessen, "Ge-doped b-Ga2O3 MOSFETs," IEEE Electron Device Lett. 38, 775–778 (2017).
    11. H. Okumura, M. Kita, K. Sasaki, A. Kuramata, M. Higashiwaki, and J. S. Speck, "Systematic investigation of the growth rate of b-Ga2O3 (010) by plasma-assisted molecular beam epitaxy," Appl. Phys. Express 7, 095501 (2014).
    12. S.-H. Han, A. Mauze, E. Ahmadi, T. Mates, Y. Oshima, and J. S. Speck, "n-type dopants in (001) b-Ga2O3 grown on (001) b-Ga2O3 substrates by plasma- assisted molecular beam epitaxy," Semicond. Sci. Technol. 33, 045001 (2018).
    13. A. Mauze, Y. Zhang, T. Itoh, E. Ahmadi, and J. S. Speck, "Sn doping of (010) b-Ga2O3 films grown by plasma-assisted molecular beam epitaxy," Appl. Phys. Lett. 117, 222102 (2020).
    14. K. Sasaki, A. Kuramata, T. Masui, G. Villora, K. Shimamura, and S. Yamakoshi, "Device-quality b-Ga2O3 epitaxial films fabricated by ozone molecular beam epitaxy," Appl. Phys. Express 5, 035502 (2012).
    15. P. Vogt, F. V. Hensling, K. Azizie, C. S. Chang, D. Turner, J. Park, J. P. McCandless, H. Paik, B. J. Bocklund, G. Hoffman, O. Bierwagen, D. Jena, H. G. Xing, S. Mou, D. A. Muller, S. L. Shang, Z. K. Liu, and D. G. Schlom, "Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy," APL Mater. 9, 031101 (2021).
    16. J. P. McCandless, V. Protasenko, B. W. Morell, E. Steinbrunner, A. T. Neal, N. Tanen, Y. Cho, T.J. Asel, S. Mou, P. Vogt, and H.G. Xing, "Controlled Si doping of ß-Ga2O3 by molecular beam epitaxy." Appl. Phys. Lett. 121, 7, 072108 (2022).

    Presenters

    • Zhuoqun Wen

      • University of Michigan

    Authors

    • Zhuoqun Wen

      • University of Michigan

    • Elaheh Ahmadi

      • University of Michigan

    • Kamruzzaman Khan

      • University of Michigan

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  • ORAL

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    Publication: Andrew Venzie, Amanda Portoff, Michael Stavola, W. Beall Fowler, Jihyun Kim, Dae-Woo Jeon, Ji-Hyeon Park, and Stephen J. Pearton , "H trapping at the metastable cation vacancy in a-Ga2O3 and a-Al2O3", Appl. Phys. Lett. 120, 192101 (2022) https://doi.org/10.1063/5.0094707

    Presenters

    • Andrew B Venzie

      • Lehigh University

    Authors

    • Andrew B Venzie

      • Lehigh University

    • Amanda Portoff

      • Lehigh University

    • Michael B Stavola

      • Lehigh Univ
      • Lehigh University

    • W B Fowler

      • Lehigh University

    • Stephen J Pearton

      • University of Florida

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  • ORAL

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    Presenters

    • Arjan Singh

      • Cornell University

    Authors

    • Arjan Singh

      • Cornell University

    • Jimy Encomendero

      • Cornell University

    • Felix V Hensling

      • Cornell University

    • Kathy Azizie

      • Cornell University

    • Vladimir Protasenko

      • Cornell University

    • Kazuki Nomoto

      • Cornell University

    • Darrell G Schlom

      • Cornell University
      • Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
      • Department of Materials Science and Engineering, Cornell University

    • Debdeep Jena

      • Cornell University

    • Huili Grace Xing

      • Cornell University

    • Farhan Rana

      • Cornell University

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  • ORAL

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    Publication: [1] J. B. Varley, A. Janotti, C. Franchini, and C. G. Van de Walle, "Role of self-trapping in luminescence and p -type conductivity of wide-band-gap oxides," Phys. Rev. B, vol. 85, no. 8, p. 081109, Feb. 2012, doi: 10.1103/PhysRevB.85.081109.

    [2] D. Thapa, J. Lapp, I. Lukman, and L. Bergman, "Ultra-wide bandgap ß-Ga2O3 films: Optical, phonon, and temperature response properties," AIP Adv., vol. 11, no. 12, p. 125022, Dec. 2021, doi: 10.1063/5.0074697.

    Presenters

    • Isiaka O Lukman

      • University of Idaho

    Authors

    • Isiaka O Lukman

      • University of Idaho

    • Leah Bergman

      • university of Idaho

    View abstract →