Exploring Free-standing PbZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub> Membranes and its Nonvolatile Gating Effect in Two-dimensional MoS<sub>2</sub>
ORAL
Abstract
We report a comprehensive study of single crystalline free-standing PbZr0.2Ti0.8O3 (PZT) and PZT/(La,Sr)MnO3 (LSMO) membranes on different base-layers, including Au, LSMO/SrTiO3 (STO), and 2D semiconductor MoS2. We deposit 10 to 50 nm epitaxial PZT thin films on Sr3Al2O6 (SAO) or LSMO/SAO buffered STO substrates using off-axis RF magnetron sputtering. After water etching of the SAO buffer layer, we transfer the suspended oxide membranes on designated base layers. We create stripe and dot shaped domains in the PZT and PZT/LSMO membranes and analyze the domain wall roughness and creep behaviors via piezo-response force microscopy, which reveals long range random bond disorder dominated behavior and substrate-dependent dimensionality. We then fabricate 2D MoS2 transistors sandwiched between 50 nm PZT membrane top-gates and SiO2 back-gates. Switching the polarization induces nonvolatile current switching in the MoS2 channel, with a current on/off ratio of ~2.04×105 achieved at room temperature. The PZT membrane top-gated MoS2 transistors exhibit long retention for over 3 days in both on and off states and robust cycling behavior, making them promising for developing flexible nonvolatile memory applications.
*This work was supported by NSF (DMR-1710461, DMR-2118828, and Nebraska ERSCoR OIA-2044049) and Nebraska Center for Energy Sciences Research.
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Presenters
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Qiuchen Wu
- University of Nebraska - Lincoln
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln
- Department of Physics and Astronomy & Nebraska Center for Materials and NanoscienceUniversity of Nebraska - Lincoln
- Physics and Astronomy, University of Nebraska-Lincoln