Molecular Beam Epitaxy of Superconducting In-Doped Tin Telluride (Sn_1-xIn_xTe)

Topological crystalline insulators (TCI) such as Tin Telluride (SnTe), have garnered great interest due to their unique magnetotransport properties and potential applications in novel electronic devices. More recently, it has been shown that a superconducting state is induced in SnTe by introducing indium as a dopant, (Sn1-xInxTe). This begs the question of whether this compound is a candidate as a superconducting TCI. We have grown In-doped SnTe on BaF2(111) substrates in a chalcogenide molecular beam epitaxy system. XRD measurements confirm high quality single phase SnTe. By increasing the indium concentration, we observe that the critical temperature of superconductivity increases and the carrier mobility is systematically suppressed. We also observe quantum oscillations in dilute samples with high mobility. These results shed light on the nature of the superconducting transition in Sn1-xInxTe.