Strongly temperature-dependent spin-orbit torque in sputtered WTe<sub>x</sub>

ORAL

Abstract

Type-II Wely semimetals have attracted considerable interest due to the strong spin-orbit coupling and Fermi arc surface states. Recently, large charge-to-spin conversion was also observed in amorphous Wely semimetals. Here, we report the strong temperature dependence of the SOT efficiency of sputtered WTex. The SOT efficiency is 0.35 under 295 K, dramatically increasing to a sizeable SOT efficiency above 3.5 under 12 K. We further perform current-induced switching of perpendicular magnetization in sputtered WTex devices from 12 K to room temperature. Our results show the potential of the industrial application based on sputtered Wely semimetals.

*The authors at HKUST acknowledge funding support from the Research Grant Council (Grant No. 16303521 and 26200520), the Research Fund of Shenzhen-Hong Kong-Macau Science and Technology Program (Category C, Grant No. SGDX2020110309460000), and the Research Fund of Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology (Grant No. 2020B1212030010).

Publication: None.

Presenters

  • ZHEYU REN

    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China

Authors

  • ZHEYU REN

    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
  • RUIZI LIU

    • HKUST, Department of Electrical Engineering, Clear Water Bay, Hongkong
    • HKUST
    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
  • SHUN KONG CHEUNG

    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
  • KUN QIAN

    • HKUST, Department of Electrical Engineering, Clear Water Bay, Hongkong
    • HKUST
    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
  • XUEZHAO WU

    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
  • ZHIHUA XIAO

    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
  • ZIHAN TONG

    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
  • JIACHENG LIU

    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
  • XIAOLIN REN

    • Department of Physics, The Hong Kong University of Science and Technology, Hong Kong, China
  • QIMING SHAO

    • HKUST, Department of Electrical Engineering, Clear Water Bay, Hongkong
    • HKUST
    • Hong Kong University of Science and Technology
    • Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China