Strongly temperature-dependent spin-orbit torque in sputtered WTe<sub>x</sub>
ORAL
Abstract
Type-II Wely semimetals have attracted considerable interest due to the strong spin-orbit coupling and Fermi arc surface states. Recently, large charge-to-spin conversion was also observed in amorphous Wely semimetals. Here, we report the strong temperature dependence of the SOT efficiency of sputtered WTex. The SOT efficiency is 0.35 under 295 K, dramatically increasing to a sizeable SOT efficiency above 3.5 under 12 K. We further perform current-induced switching of perpendicular magnetization in sputtered WTex devices from 12 K to room temperature. Our results show the potential of the industrial application based on sputtered Wely semimetals.
*The authors at HKUST acknowledge funding support from the Research Grant Council (Grant No. 16303521 and 26200520), the Research Fund of Shenzhen-Hong Kong-Macau Science and Technology Program (Category C, Grant No. SGDX2020110309460000), and the Research Fund of Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology (Grant No. 2020B1212030010).
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Publication:None.
Presenters
ZHEYU REN
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
Authors
ZHEYU REN
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
RUIZI LIU
HKUST, Department of Electrical Engineering, Clear Water Bay, Hongkong
HKUST
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
SHUN KONG CHEUNG
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
KUN QIAN
HKUST, Department of Electrical Engineering, Clear Water Bay, Hongkong
HKUST
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
XUEZHAO WU
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
ZHIHUA XIAO
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
ZIHAN TONG
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
JIACHENG LIU
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
XIAOLIN REN
Department of Physics, The Hong Kong University of Science and Technology, Hong Kong, China
QIMING SHAO
HKUST, Department of Electrical Engineering, Clear Water Bay, Hongkong
HKUST
Hong Kong University of Science and Technology
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China