Low Temperature Photoluminescence of SbPS<sub>4</sub>

ORAL

Abstract

SbPS4 is a direct gap semiconductor with a bandgap of 3 eV. It is known to have a one-dimensional van der Waals structure. SbPS4 samples were mechanically exfoliated onto SiO2 substrates. Bundles of SbPS4 were investigated with low temperature photoluminescence (PL) spectroscopy at 4 K. We investigated the excitation wavelength dependence of the PL and confirmed that the bandgap occurs near 3 eV. We observed PL from SbPS4 with a strong emission peak near 1.53 eV. Polarization dependent measurements revealed that the PL is linearly polarized along the bundle direction. I will discuss possible origins of the PL including exciton formation and defect bound emission.

*We acknowledge support from AFOSR Grant Nos. FA9550-21-1-0219 and FA9550-22-1-0312.

–

Presenters

  • Sean M Driskill

    • University of Arizona

Authors

  • Sean M Driskill

    • University of Arizona

  • Fateme Mahdikhanysarvejahany

    • University of Arizona

  • Vasili Perebeinos

    • State Univ of NY - Buffalo

  • Oliver L Monti

    • University of Arizona

  • Brian J LeRoy

    • University of Arizona

  • Tai Kong

    • University of Arizona

  • John Schaibley

    • University of Arizona