Effect of Pr substitution on the valence transition in Ce<sub>1-</sub><sub>x</sub>Pr<sub>x</sub>Os<sub>4</sub>Sb<sub>12</sub>

ORAL

Abstract

At low temperatures T, the filled skutterudite CeOs4Sb12 is a heavy-fermion compensated semimetal and exhibits a Spin-Density-Wave (SDW) phase at ~1 K. Theoretical predictions suggested that it possibly possesses topologically protected states where electron and hole Fermi surfaces (FS) may coexist at low temperatures. Through previous studies of this compound, we’ve found that a near spherical FS above 28 T, enchantment of cyclotron mass below 35 T, and a valence transition occurs with a striking reverse wedge-shape T-H phase diagram [1,2,3]. When substituting the rare-earth element Pr for Ce, hole-doping is introduced in CeOs4Sb12. In this report, we present the influence of Pr-substitution on the electronic properties, T-H phase boundaries of the valence transition, and carrier density in Ce1xPrxOs4Sb12 (x = 0.1 and 0.2).

Refs: [1] K. Götze et. al, New J. Phys. 24, 043044 (2022). [2] K. Götze et. al, PRB 101, 075102 (2020). [3] P.-C. Ho et. al, PRB 94, 205140 (2016).

*Research at CSU-Fresno is supported by NSF DMR-1905636; at Hokkaido U. by JSPS KAKENHI No. 26400342 and No. JP21KK0046; at the NHMFL, USA, by NSF DMR-1644779, State of FL; at UCSD by NSF DMR-1810310 & US DOE DEFG02-04ER46105.

–

Presenters

  • Leticia M Ramos

    • California State University, Fresno

Authors

  • Leticia M Ramos

    • California State University, Fresno

  • Pei-Chun Ho

    • California State University, Fresno

  • Tatsuya Yanagisawa

    • Hokkaido University, Sapporo, Japan

  • John Singleton

    • National High Magnetic Field Laboratory, Los Alamos National Laboratory, New Mexico

  • M Brian Maple

    • University of California, San Diego
    • University of California San Diego
    • U. of California, San Diego