How to Recognize the Universal Aspects of Mott Criticality?
ORAL
Abstract
We critically discuss several examples of two-dimensional electronic systems displaying interaction-driven metal-insulator transitions of the Mott (or Wigner-Mott) type, including dilute two-dimension electron gases (2DEG) in semiconductors, Mott organic materials, as well as the recently discovered transition-metal dichalcogenide (TMD) moiré bilayers. Remarkably similar behavior is found in all these systems, which is starting to paint a robust picture of Mott criticality. Most notably, on the metallic side, a resistivity maximum is observed whose temperature scale vanishes at the transition. We compare the available experimental data on these systems to three existing theoretical scenarios: spinon theory, Dynamical Mean Field Theory (DMFT), and percolation theory. We show that the DMFT and percolation pictures for Mott criticality can be distinguished by studying the origins of the resistivity maxima using an analysis of the dielectric response.
*This work was supported by the NSF Grant No. 1822258, and the National High Magnetic Field Laboratory through the NSF Cooperative Agreement No. 1644779 and the State of Florida. LR acknowledges support from the Swiss National Science Foundation via Ambizione grant PZ00P2_174208.
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Publication: Crystals 2022, 12(7), 932.
Presenters
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Yuting Tan
- National High Magnetic Field Laboratory