Electrical detection of the flat-band position in field-effect van der Waals structures

ORAL

Abstract

Flat-band systems of two-dimensional materials have enabled the investigation of emergent quantum phenomena and correlated states in van der Waals heterostructures. However, the electrical detection of the energetic position of van Hove singularities in field-effect structures has been hindered by the critically high effective masses of carriers at flat dispersions. Here, we exploit tunneling mechanisms in heterostructures based on different thicknesses of indium selenide in order to demonstrate the electrical detection of the van Hove singularity position in layer-dependent field-effect structures from cryogenic to room temperature. Our work indicates the study of tunneling currents as a viable approach to investigate the properties of van der Waals flat-band systems.

*This work was financially supported by the Swiss National Science Foundation (grant nos. 175822, 177007 and 164015), the European Union's Horizon 2020 research and innovation programme under grant agreements 785219 and 881603 (Graphene Flagship Core 2 and Core 3), and the Marie Curie Sklodowska ITN network "2-Exciting" (grant no. 956813). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan (Grant Number JPMXP0112101001) and JSPS KAKENHI (Grant Numbers JP19H05790 and JP20H00354). K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by the MEXT, Japan (Grant Number JPMXP0112101001) and JSPS KAKENHI (Grant Numbers JP19H05790 and JP20H00354).

–

Presenters

  • Edoardo Lopriore

    • Ecole Polytechnique Federale de Lausanne

Authors

  • Edoardo Lopriore

    • Ecole Polytechnique Federale de Lausanne

  • Gabriele Pasquale

    • EPFL

  • ZHE SUN

    • Ecole Polytechnique Federale De Lausanne
    • EPFL

  • Kristians Cernevics

    • Ecole Polytechnique Federale de Lausanne

  • Fedele Tagarelli

    • Ecole Polytechnique Federale de Lausanne

  • Kenji Watanabe

    • National Institute for Materials Science
    • Research Center for Functional Materials, National Institute of Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • National Institute for Materials Science, Japan
    • Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
    • NIMS Japan

  • Takashi Taniguchi

    • National Institute for Materials Science
    • Kyoto Univ
    • International Center for Materials Nanoarchitectonics, National Institute of Materials Science
    • Kyoto University
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Science, Japan
    • National Institute For Materials Science
    • NIMS
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
    • NIMS Japan

  • Oleg V Yazyev

    • Ecole Polytechnique Federale de Lausanne

  • Andras Kis

    • Ecole Polytechnique Federale de Lausanne