Magnetotransport in RuCl3- Doped Graphene Devices

ORAL

Abstract

Recently it has been demonstrated that substantial charge-transfer doping may be realized in graphene by laminating to other 2D materials with a large work function mismatch such as α−RuCl3. Here we investigate the device mobility achievable through such charge transfer schemes and compare device performance with conventional electrostatic gating. Magneto-transport in the quantum Hall regime, as well as new device applications based on charge-transfer doping such as for microwave transmission, will be discussed.

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Presenters

  • Dihao Sun

    • Columbia University

Authors

  • Dihao Sun

    • Columbia University

  • Ziyu Liu

    • Columbia University

  • Lloyd W Engel

    • Florida State University

  • Jiaqiang Yan

    • Oak Ridge National Laboratory
    • Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA

  • David G Mandrus

    • University of Tennessee
    • Oak Ridge National Laboratory

  • Kenji Watanabe

    • National Institute for Materials Science
    • Research Center for Functional Materials, National Institute of Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • National Institute for Materials Science, Japan
    • Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
    • NIMS Japan

  • Takashi Taniguchi

    • National Institute for Materials Science
    • Kyoto University

  • Cory R Dean

    • Columbia Univ
    • Columbia University