Organic Thin Film Transistor Based on the Organic-Inorganic Hybrid Ferroelectric Insulator Layer

Flexible memory technologies that work in a variety of environments are now necessary due to the increased interest in flexible semiconductors and flexible displays. We employed a poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)] thin film insulator layer with piezoelectricity, superconductivity, and ferroelectricity capabilities in this application. However, because P(VDF-TrFE) is a semi-crystalline polymer, leakage current arises due to crystal defects and a fragile film morphology. So, we attempted to reduce leakage current value using a hybrid structure with inorganic insulator silicon dioxide (SiO₂), and formed a complementary organic/inorganic hybrid ferroelectric insulation layer-based organic thin film transistor that minimizes leakage current value while maximizing ferroelectric characteristics via SiO₂ thickness control (17nm, 42nm, 100nm, 300nm). As a consequence, it was found that the SiO₂ 100nm and P(VDF-TrFE) 200nm organic/inorganic hybrids had the highest hysteresis characteristics, and the transistor device characteristics were also extremely excellent.