Measurements of the Spin and Valley Hall Effect in Monolayer WSe<sub>2</sub> Dependence on Voltage and Temperature for Spintronic Applications

ORAL

Abstract

The coupled spin and valley Hall effect (SVHE) in monolayer transition metal dichalcogenides (TMDs) offers the opportunity to manipulate the spin and valley degree of freedom in these systems for spintronics. We applied magneto-optic Kerr effect (MOKE) with a 700 nm laser to directly measure the SVHE in monolayer tungsten diselenide (WSe2) field effect transistors. Carrier-density-dependent and temperature-dependent reflectance spectra were measured, and the dielectric function dispersion was calculated to calibrate the MOKE data. We will show the SVHE MOKE signature is strongly dependent on the source-drain current, gate induced carrier density, and temperature, and that the signal can persist towards warmer temperatures, providing critical measurements needed to make use of the SVHE in devices.

*This research was primarily supported by the National Science Foundation through the Center for Dynamics and Control of Materials: an NSF MRSEC under Cooperative Agreement No. DMR-1720595. This work was performed in part at the University of Texas Microelectronics Research Center, a member of the National Nanotechnology Coordinated Infrastructure (NNCI), which is supported by the National Science Foundation (Grant ECCS-2025227).

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Presenters

  • Xintong Li

    • University of Texas at Austin

Authors

  • Xintong Li

    • University of Texas at Austin

  • Suyogya Karki

    • University of Texas at Austin

  • Yihan Liu

    • University of Texas at Austin

  • Zhida Liu

    • University of Texas at Austin
    • The University of Texas at Austin

  • Xiaoqin (Elaine) Li

    • University of Texas at Austin

  • Deji Akinwande

    • University of Texas at Austin

  • Jean A Incorvia

    • Univ of Texas at Austin
    • University of Texas at Austin
    • University of Texas