Uniform and tuneable 'all-silicon' spin qubit devices in a 300mm integrated process

Semiconductor spin qubits are developing at a rapid pace with increasing qubit coherence times and quantum gate-fidelities over the last years [1-2]. This progress has resulted in multiple proposals for large-scale spin qubit-arrays [3-4]. However, scaling up existing qubit prototypes to several qubit arrays require highly uniform spin qubit devices.

We address this challenge by employing a state-of-the-art ‘all-silicon’ 300mm fabrication process [5-6]. In this talk, we present latest results on the integration of highly tuneable and uniform Si-MOS spin qubit devices in a lithographically flexible integration scheme, which combines e-beam and optical lithography. Low temperature device performance will be discussed, along with the main challenges for further development.

[1] Yoneda et al., Nature Nanotech. 13 (2018)

[2] Veldhorst et al., Nature Comm., 8(1) (2017)

[3] Li et al., Science Adv., 4(7) (2018)

[4] Mohiyaddin et al., Proc. of IITC (2019)

[5] Govoreanu et al., Si Nanoelectronics Workshop (2019)

[6] Dumoulin Stuyck et al., VLSI (2021)