What Can Near-Zero-Field Magnetoresistance Tell Us about Defects in Semiconductors?

ORAL

Abstract

We show, for a technologically significant case, that near-zero-field magnetoresistance (NZFMR) offers similar analytical power to that of electrically detected magnetic resonance (EDMR) for studying metal-oxide-semiconductor field effect transistor (MOSFET) reliability. NZFMR has significant practical advantages over EDMR in experimental simplicity. NZFMR is used to track the generation of interface trapping centers in Si MOSFETs during accelerated breakdown studies. The technique successfully identifies the Pb0 and Pb1 dangling bond centers via hyperfine interactions with 29Si atoms hosting some of the dangling bonds. NZFMR also provides information about charge capture kinetics at these interface defect sites. The kinetics are explored using the bipolar amplification effect measurement, the theory of which has recently been significantly advanced [1].

[1] Ashton, James P., et al. Journal of Applied Physics 130.13 (2021): 134501.

*1) Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government.2) This project was sponsored by the Department of Defense, Defense Threat Reduction Agency under Grant No. HDTRA1-18-0012. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred.

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Presenters

  • Stephen J Moxim

    • Pennsylvania State University

Authors

  • Stephen J Moxim

    • Pennsylvania State University

  • Fedor V Sharov

    • Pennsylvania State University

  • Patrick M Lenahan

    • Pennsylvania State University