Probing the Variation of the Intervalley Tunnel Coupling in a Silicon Triple Quantum Dot
ORAL
Abstract
The “valley splitting” of the two lowest-lying valleys in silicon quantum wells is known to be sensitive to atomic scale disorder. A large valley splitting is desirable to have a well-defined spin qubit. In addition, an understanding of the intervalley tunnel coupling that couples different valleys in adjacent quantum dots is extremely important, as the resulting gaps in the energy-level diagram may affect the fidelity of charge and spin-transfer protocols in silicon quantum-dot arrays. We use microwave spectroscopy to probe variations in the valley splitting, and the intra- and intervalley tunnel couplings (tij and tij’) that couple dots i and j in a triple quantum dot. We uncover large variations of tij’/tij and linear scaling of tij’ with tij, as expected from theory. The results indicate strong interactions between different valley states on neighboring dots, which we attribute to local inhomogeneities in the silicon quantum well.
*Supported by Army Research Office Grant No. W911NF15-1-0149 and the Gordon and Betty Moore Foundation's EPiQS Initiative through Grant No. GBMF4535. Devices are fabricated in the Princeton University Quantum Device Nanofabrication Laboratory, which is managed by the Department of Physics. The authors acknowledge the use of Princeton's Imaging and Analysis Center, which is partially supported by the Princeton Center for Complex Materials, a National Science Foundation MRSEC Program (DMR-2011750).
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Presenters
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Felix F Borjans
- Department of Physics, Princeton University / Components Research, Intel Corporation
- Intel Corporation, Hillsboro
- Intel Corporation - Hillsboro