1D Coulomb drag in the ultra-low temperature limit

ORAL

Abstract

We report temperature dependence measurements of 1D Coulomb drag in GaAs/AlGaAs quantum wires.  Utilizing enhanced filtering and a nuclear magnetization stage, 1D electron temperatures below 10 mK have been achieved.  The drag resistance RD exhibits the standard modulation as the wires’ subband occupancy is varied.  The temperature dependence of RD as a function of both subband occupancy and interwire separation has been studied.  The qualitative and quantitative functional shape of this dependence is utilized to determine the parametric evolution of the dominant drag inducing scattering mechanisms in the ultra-low temperature limit.

*This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) OoS. Sandia National Laboratories is a multimission laboratory managed and operated by NTESS LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. DOE’s National Nuclear Security Administration under contract DE-NA-0003525. The views expressed in the article do not necessarily represent the views of the U.S. DOE or the United States Government.A portion of this work was performed at the National High Magnetic Field Laboratory, which is supported by the National Science Foundation Cooperative Agreement No. DMR-1644779 and the State of Florida.

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Presenters

  • Harith Kassar

    • University of Florida

Authors

  • Harith Kassar

    • University of Florida

  • Rebika Makaju

    • University of Florida

  • Sadhvikas Addamane

    • Center for Integrated Nanotechnologies, Sandia National Laboratories

  • Dominique Laroche

    • University of Florida