Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers
ORAL
Abstract
While transition-metal dichalcogenide (TMD)–based moire materials have been shown to host various correlated electronic phenomena, topological states have not been experimentally observed until now. In this work, using first-principle calculations and continuum modeling, we reveal the displacement field–induced topological moire bands ´ in AB-stacked TMD heterobilayer MoTe2/WSe2. Valley-contrasting Chern bands with nontrivial spin texture are formed from interlayer hybridization between MoTe2 and WSe2 bands of nominally opposite spins. Our study establishes a recipe for creating topological bands in AB-stacked TMD bilayers in general, which provides a highly tunable platform for realizing quantum-spin Hall and interaction-induced quantum anomalous Hall effects.
*This work is primarily supported by Department of Energy Office of Basic Energy Sciences, Division of Materials Sciences and Engineering Awards DE-SC0018945 (theoretical modeling) and DE-SC0020149 (band-structure calculation). L.F. is partly supported by a Simons Investigator award from the Simons Foundation and the David and Lucile Packard Foundation.
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Publication:[1]Zhang, Yang, Trithep Devakul, and Liang Fu. "Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers." Proceedings of the National Academy of Sciences 118, no. 36 (2021). [2] Li, T.*, Jiang, S.*, Shen, B.*, Zhang, Y.*, Li, L., Devakul, T., Watanabe, K., Taniguchi, T., Fu, L., Shan, J. and Mak, K.F., 2021. Quantum anomalous Hall effect from intertwined moir\'e bands. Nature (in press)
