Cavity Quantum Electrodynamics in Silicon Carbide Photonics with Color Centers

ORAL

Abstract

We demonstrate cavity quantum electrodynamics experiments with the silicon vacancy in 4H-Silicon-Carbide-on-Insulator integrated photonics. We show nearly-transform-limited, stable quantum emission from silicon vacancy defects in a microdisk resonator and observe emitter-cavity cooperativity approaching unity. We observe single- and two-photon interference between a pair of silicon vacancies, a prerequisite for multi-emitter quantum photonics in Silicon Carbide.

*This research is funded by the U.S. Department of Energy, Office of Science, under Awards DE-SC0019174 and DE-Ac02-76SF00515

–

Publication: Lukin et al, 4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics, Nat. Photonics (2020)
Lukin et al., Spectrally reconfigurable quantum emitters enabled by optimized fast modulation, npj Quantum Info (2020)
Lukin et al., Integrated Quantum Photonics with Silicon Carbide: Challenges and Prospects, PRX Quantum (2020)
Lukin et al., manuscript in preparation.

Presenters

  • Daniil M Lukin

    • Stanford University

Authors

  • Daniil M Lukin

    • Stanford University

  • Melissa A Guidry

    • Stanford University

  • Joshua Yang

    • Stanford University

  • Sattwik Mishra

    • Stanford University

  • Misagh Ghezellou

    • Linkoping University

  • Hiroshi Abe

    • National Institutes for Quantum Science and Technology (QST), Takasaki, Japan
    • National Institutes for Quantum Science and Technology

  • Takeshi Ohshima

    • National Institutes for Quantum Science and Technology (QST), Takasaki, Japan
    • National Institutes for Quantum Science and Technology

  • Jawad Ul Hassan

    • Linkoping University
    • Linköping University

  • Jelena Vuckovic

    • Stanford University
    • Stanford Univ