Coulomb Blockade Phenomena in Random Telegraph Noise of a commercial 28-nm PMOS

A quantum dot (QD) is a zero-dimensional nano-structure that can be one of the candidate platforms to implement the quantum computing in semiconductors as quantum bits (qubits). Specifically, QDs in the metal-oxide-semiconductor field-effect transistors are created readily as fabrication facilities and processes are already mature, and the QD platform controlling qubits is promising for a large number of qubits scaled-up system. However, some QD transport features by gate-controlled MOSFETs are typically observed dilution refrigerator temperatures. In this presentation, we examined QD phenomena with a foundry 28-nm PMOS transistor even at 14 K and performed systematic noise analysis of the random telegraph noise (RTN). The Coulomb blockade phenomenon is shown as a hump in DC transfer curves near-threshold voltage due to the resonant tunneling. Gate-voltage dependent measurements show consistent trends between RTN noise parameters and these trends tell us the minimum noise point where the peak of Coulomb blockade region in the DC transfer curves which can help to design cryogenic devices.