Properties of Cr<sub>5</sub>Te<sub>8</sub>/WSe<sub>2</sub> - 2D transition-metal dichalcogenides-based ferromagnetic heterostructures

POSTER

Abstract

Cr5Te8/WSe2 superlattices, consisting of 2D Cr5Te8 conducting magnet with perpendicular anisotropy and a monolayer WSe2 investigated using DFT. We show that Cr5Te8 maintain its ferromagnetic coupling within CrTe2 layer making a case of proximity effect studies. Fermi energy falls within the WSe2 bandgap. We observe that conduction band of WSe2 is located closer to the Fermi level on the energy scale than the valence band. There is overall charge transfer of 0.18e across the interface from Cr5Te8 towards WSe2. Due to the presence of Cr at the interface, the Cr-Se bonds form that strongly affect the charge redistribution and can be detected by differential charge density. Bader charge analysis show that interfacial Cr sites have larger electron charge compared to the bulk counterparts. The obvious charge coupling between two subsystems may prevent clear observation of photoluminescence in the heterostructure.

*This research is supported by NU Collaborative Research and NSF-DMREF (Grant No. 1729288).

Presenters

  • Renat Sabirianov

    • University of Nebraska - Omaha

Authors

  • Renat Sabirianov

    • University of Nebraska - Omaha

  • Hao Zeng

    • State Univ of NY - Buffalo
    • SUNY Buffalo

  • Mengying Bian

    • University at Buffalo, State University of New York

  • Liang Zhu

    • Southern University of Science and Technology
    • Department of Physics and Shenzhen Key Laboratory for Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, China

  • Chang Huai

    • University at Buffalo, State University of New York
    • State Univ of NY - Buffalo

  • Austin Marga

    • University at Buffalo, State University of New York
    • SUNY Buffalo

  • Gang Wang

    • Southern University of Science and Technology
    • Department of Physics and Shenzhen Key Laboratory for Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, China
    • Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China