Chemical doping studies on thin film antiferromagnetic kagome metal FeSn

Recent spectroscopic observation of Dirac and flat bands in transition metal stannide T_mSn_y (T = Fe, Co) with high temperature magnetism has led to escalating excitement towards incorporating topological and correlated kagome materials into functional devices [1]. One of the main challenges along this path pertains to difficulty in attaining fully on-demand control over chemical potential and spin texture useful for versatile device operations. Here we report the systematic chemical doping studies on epitaxial thin films of antiferromagnetic kagome metal FeSn [2,3]. We present electrical and magnetic characterizations of samples across a wide range of doping concentration, temperature, and magnetic field. We interpret the results in light of two-dimensional kagome band structures and their inter-layer couplings. We also discuss the relevance of this work to spin-based information technologies including spin-polarized transport.