Bottom Up Growth of Twisted Bilayer Graphene

Moiré superlattices in twisted bilayer graphene have been shown to exhibit highly correlated electronic phases. Investigating these phases in graphene will provide the physics community with an accessible system to obtain information about unconventional superconductivity and correlated insulating phases. However, current twisted bilayer graphene devices can only be achieved through messy top-down construction methods. This results in small, disordered, and inconsistent devices inadequate for surface analysis. We report on a possible solution by combining UHV CVD and MBE methods to create clean bilayer graphene growth with varying twist angles grown on crystalline transition metal substrates. This growth process will aid in the creation of devices that can be characterized by Scanning Tunneling Microscopy.