Origin of Rashba Spin Splitting and Strain Tunability in Ferroelectric Bulk CsPbF<sub>3</sub>

ORAL

Abstract

Spin–orbit coupling (SOC) in conjunction with broken inversion symmetry acts as a key ingredient for several intriguing quantum phenomena, viz., persistent spin textures, topological surface states and Rashba–Dresselhaus (RD) effect. The coexistence of spontaneous polarization and the RD effect in ferroelectric (FE) materials enables the electrical control of spin degrees of freedom. Here, we explore the FE lead halide perovskite CsPbF3 as a potential candidate in the field of spintronics by employing state-of-the-art first-principles-based methodologies, viz., density functional theory (DFT) with semilocal and hybrid functional (HSE06) combined with SOC and many-body perturbation theory (G0W0). For a deeper understanding of the observed spin splitting, the spin textures are analyzed using the k.p model Hamiltonian. We find there is no out-of-plane spin component indicating that the Rashba splitting dominates over Dresselhaus splitting. Owing to the presence of Pb-6p orbital in conduction band, the large value of Rashba coefficient (αR) at conduction band minimum (CBm) is noticed in comparison to that of at the valence band maximum (VBM). We also observe that the strength of Rashba spin splitting can be substantially tuned on application of uniaxial strain (±5%). More interestingly, we notice reversible spin textures by switching the FE polarization in CsPbF3 perovskite, making it potent for perovskite-based spintronic applications.

*Preeti Bhumla acknowledges UGC, India, for the senior research fellowship [Grant No. 1392/(CSIR-UGC NET JUNE 2018)]. Saswata Bhattacharya acknowledges the financial support from SERB under the core research grant (Grant No. CRG/2019/000647). We acknowledge the High Performance Computing (HPC) facility at IIT Delhi for computational resources.

Publication: J. Phys. Chem. Lett. 2021, 12, 39, 9539–9546

Presenters

  • Preeti Bhumla

    • Indian Institute of Technology Delhi, New Delhi

Authors

  • Preeti Bhumla

    • Indian Institute of Technology Delhi, New Delhi
  • Saswata Bhattachara

    • Indian Institute of Technology Delhi
    • Indian Institute of Technology Delhi, New Delhi
    • Indian Institute of Techknowlogy, Delhi, India