Colossal angular magnetoresistance in a ferrimagnetic nodal-line semiconductor Mn3Si2Te6

ORAL

Abstract

Topological magnets, where both magnetism and nontrivial band topology coexist, have emerged as promising candidates to realize novel electronic and spintronic functionalities, because their topological band degeneracy can be readily tuned by spin configurations, thus dramatically modulating electronic conduction. Here we propose a new class of topological magnets, namely, magnetic nodal-line semiconductors, in which spin-polarized conduction or valence bands possess topological nodal-line degeneracy. Taking a layered ferrimagnet Mn3Si2Te6 as a model system, we show that the topological band degeneracy, driven by chiral molecular orbital states, is lifted depending on the spin orientation, which leads to a metal-insulator transition in the same ferrimagnetic phase. As a result, we have observed extremely large angular magnetoresistance exceeding a trillion percent per radian, which we call colossal angular magnetoresistance. Our findings highlight that magnetic nodal-line semiconductors are a promising platform for realizing extremely sensitive spin- or orbital-dependent functionalities.

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Publication: "Colossal angular magnetoresistance in ferrimagnetic nodal-line semiconductors" Junho Seo*, Chandan De*, Hyunsoo Ha*, Ji Eun Lee*, Sungyu Park, Joonbum Park, Yurii Skourski, Eun Sang Choi, Bongjae Kim, Gil Young Cho, Han Woong Yeom, Sang-Wook Cheong, Jae Hoon Kim, Bohm-Jung Yang, Kyoo Kim and Jun Sung Kim, Nature, accepted (2021)

Presenters

  • Junho Seo

    • Institute for Basic Science; Pohang University of Science and Technology
    • Department of Physics, Pohang University of Science and Technology, Pohang, Korea

Authors

  • Junho Seo

    • Institute for Basic Science; Pohang University of Science and Technology
    • Department of Physics, Pohang University of Science and Technology, Pohang, Korea

  • CHANDAN DE

    • Pohang University of Science and Technology
    • Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science & Laboratory of Pohang Emergent Materials, Pohang Accelerator Laboratory
    • CALDES, Institute for Basic Science (IBS), Pohang, Korea

  • Hyunsoo Ha

    • Seoul National University

  • Ji Eun Lee

    • Yonsei University

  • Sungyu Park

    • Institute for Basic Science

  • Joonbum Park

    • Helmholtz-Zentrum Dresden-Rossendorf

  • Yurii Skourski

    • Helmholtz-Zentrum Dresden-Rossendorf

  • Eun Sang Choi

    • National High Magnetic Field Laboratory
    • National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
    • National High Magnetic Field Laboratory and Department of Physics, Florida State University

  • Bongjae Kim

    • Kunsan National University

  • Gil Young Cho

    • Pohang Univ of Sci & Tech
    • Pohang University of Science and Technology

  • Han Woong Yeom

    • Pohang Univ of Sci & Tech
    • Pohang University of Science and Technology
    • Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science

  • Sang-Wook Cheong

    • Rutgers University, New Brunswick
    • Rutgers University

  • Jae Hoon Kim

    • Yonsei University

  • Bohm-Jung Yang

    • IBS-CCES, Seoul National University
    • Seoul Natl Univ

  • Kyoo Kim

    • Korea Atomic Energy Research Institute
    • Korea Atomic Energy Research Institute (KAERI), Daejeon, Korea

  • Jun Sung Kim

    • Pohang University of Science and Technology
    • Pohang Univ of Sci & Tech
    • Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
    • Department of Physics, Pohang University of Science and Technology, Pohang, Korea