Epitaxial growth and structural and electronic properties of oriented thin films of GeNi<sub>2</sub>O<sub>4</sub> and GeCu<sub>2</sub>O<sub>4</sub> spinels
ORAL
Abstract
Frustrated magnets can host exotic many-body quantum and topological phenomena. GeNi2O4 is a three-dimensional S = 1 frustrated magnet with an unusual two-stage transition to the two-dimensional antiferromagnetic ground state, while GeCu2O4 is a high-pressure phase with a strongly tetragonally distorted spinel structure and magnetic lattice formed by S = 1/2 CuO2 linear chains with frustrated interchain exchange interactions and exotic magnetic behavior. Here, we report on the first thin-film epitaxial stabilization of these two compounds in (100) and (111) directions. The developed growth mode, surface morphology, crystal structure, and valence state were characterized by in situ reflection high-energy electron diffraction, atomic force microscopy, x-ray reflectivity, x-ray diffraction, x-ray photoelectron spectroscopy, and resonant x-ray absorption spectroscopy. Our results pave an alternative route to the investigation of the puzzling magnetic properties of these compounds and the exploration of emergent features driven by strain. Furthermore, the availability of large-area high-quality GeCu2O4 thin films opens a road for future experimentation to reveal the controversial nature of its ground state magnetism and elucidate the origin of multiferroicity in this compound.
*The work in Rutgers University was supported by the Gordon and Betty Moore Foundation's EPiQS Initiative through Grant No. GBMF4534. This research used resources of the Advanced Light Source, a US DOE Office of Science User Facility under Contract No. DEAC02-05CH11231.
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Publication: Epitaxial stabilization of thin films of the frustrated Ge-based spinels, PHYSICAL REVIEW MATERIALS 5, 064419 (2021)
Presenters
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Michael Terilli
- Rutgers University
- Rutgers University, New Brunswick