Imaging antiferromagnetic domain fluctuations and the effect of atomic-scale disorder in a doped spin-orbit Mott insulator

ORAL

Abstract

Correlated oxides can exhibit complex electronic and magnetic patterns. Understanding how magnetic domains form has been of great interest, but atomic-scale insight has been limited. We use spin-polarized scanning tunneling microscopy to image the evolution of spin-resolved modulations originating from antiferromagnetic (AF) ordering in a spin-orbit Mott insulator Sr3Ir2O7 as a function of chemical composition and temperature. We find that replacing only several percent of La for Sr leads to nanometer-scale AF puddles clustering away from La substitutions preferentially located in the middle SrO layer. Thermal erasure and re-entry into the low-temperature ground state leads to a spatial reorganization of the AF puddles. Our experiments reveal multiple stable AF domain configurations at low temperature, and shed light onto spatial fluctuations of the AF order around atomic-scale disorder in electron doped Sr3Ir2O7

*DOE Early Career Award DE-SC0020130

Presenters

  • Ilija Zeljkovic

    • Boston College

Authors

  • Ilija Zeljkovic

    • Boston College
  • He Zhao

    • Boston College
  • Zachary Porter

    • University of California, Santa Barbara
  • Xiang Chen

    • Lawrence Berkeley National Laboratory
  • Stephen D Wilson

    • University of California, Santa Barbara
  • Ziqiang Wang

    • Boston College