Colossal Piezoresistance in Narrow-Gap Eu<sub>5</sub>In<sub>2</sub>Sb<sub>6</sub>
ORAL
Abstract
We report the discovery of a remarkably large piezoresistance in Eu5In2Sb6 single crystals, wherein anisotropic metallic clusters naturally form within a semiconducting matrix due to electronic interactions. Eu5In2Sb6 shows a highly anisotropic piezoresistance, and c-axis pressure of only 0.4 GPa leads to a resistivity drop of more than 99.95% that results in a record bulk gauge factor. Our result not only reveals the role of interactions and phase separation in the realization of colossal piezoresistance, but it also highlights a novel route to multi-functional devices with large responses to both pressure and magnetic field.
*Work at Los Alamos National Laboratory (LANL) was performed under the auspices of the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Science and Engineering. SG, JXZ, and CL acknowledge support from the Laboratory Directed Research and Development program at LANL.
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Presenters
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Sean M Thomas
- Los Alamos National Laboratory
- Los Alamos National Laboratory, Los Alamos, New Mexico 87545, U.S.A.
- Los Alamos National Laboratory, Los Alamos, New Mexico, 87545, USA