STM study of the atomic and electronic structure of a single-layer Kondo lattice CePt<sub>6</sub>/Pt(111)
ORAL
Abstract
While bulk CePt5 shows antiferromagnetic order below 1 K, a multi-layered thin film of CePt5 grown on a Pt(111) substrate exhibits heavy-fermion behavior below 20 K[1]. However, the growth of single layer CePt5 has been controversial as summarized in Ref.[2] and spectroscopic studies for the electronic states of the single layer are still lacking. In this work, we study the structure and electronic states of 1 unit layer (u.l.) of a Ce-Pt intermetallic compound on Pt(111) using scanning tunneling microscopy/spectroscopy (STM/STS)[3]. By depositing Ce atoms onto Pt(111) and subsequent annealing, an ordered (2×2) structure was observed, which is reproduced by a structural model of 1 u.l. CePt6/Pt(111) consisting of a topmost Pt4 layer and an underneath CePt2 layer. By measuring STS spectra and quasiparticle interference, we found that an onset energy of the surface state observed on Pt(111) shifts downward on the surface Pt4 layer of the 1 u.l. CePt6 due to charge transfer from the CePt2 layer. We discuss possible two-dimensional coherent Kondo effect with the observed STS spectra on the 1 u.l. CePt6.
[1] M. Klein et al., Phys. Rev. Lett. 106, 186407 (2011)
[2] J. Kemmer et al., Phys. Rev. B 90, 195401 (2014).
[3] K. Ienaga et al., Phys. Rev. B (accepted)
[1] M. Klein et al., Phys. Rev. Lett. 106, 186407 (2011)
[2] J. Kemmer et al., Phys. Rev. B 90, 195401 (2014).
[3] K. Ienaga et al., Phys. Rev. B (accepted)
*This work was partly supported by Grants-in-Aid for Scientific Research (KAKENHI) from the Japan Society for the Promotion of Science (Grant No. 26287061, 26790004, 18H01146, 19H02595, 20H05179, 20K14413, and 20K21119) and Basic Research Program through the National Research Foundation of Korea funded by the Ministry of Education (Grant No. 2019R1A6A1A10073887).
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Publication: Koichiro Ienaga, Sunghun Kim, Toshio Miyamachi, and Fumio Komori, Phys. Rev. B (accepted)
Presenters
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Koichiro Ienaga
- Tokyo Institute of Technology