Controlling the electronic and magnetic properties by Sn substitution in SrRuO<sub>3</sub> epitaxial films
ORAL
Abstract
Controlling the lattice strain in films through chemical substitution has been widely investigated in strongly correlated electronic systems as a means to change electronic and magnetic properties from those of the bulk. Here we present a systematic study on epitaxial SrRu1−xSnxO3 (0 ≤ x ≤ 1) thin films grown by pulsed laser deposition to achieve stable phases in this family of quaternary perovskites, which has been unstable in bulk. We find a gradual expansion of the c-axis lattice parameter with Sn doping, serving as a means to tune chemical pressure and magnetism. This talk will focus on the electronic, magnetic, and magnetotransport properties by the effects of Sn doping in SrRuO3 thin films.
*This work was supported by the U.S. Department of Energy (DOE), Basic Energy Sciences, Materials Sciences and Engineering Division.
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Publication: A. Huon et al., Appl. Phys. Lett. 119, 112404 (2021).
Presenters
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Amanda Huon
- Oak Ridge National Laboratory
- University of the Sciences
- University of the Sciences in Philadelphia