Controlling the electronic and magnetic properties by Sn substitution in SrRuO3 epitaxial films

ORAL

Abstract

Controlling the lattice strain in films through chemical substitution has been widely investigated in strongly correlated electronic systems as a means to change electronic and magnetic properties from those of the bulk. Here we present a systematic study on epitaxial SrRu1−xSnxO3 (0 ≤ x ≤ 1) thin films grown by pulsed laser deposition to achieve stable phases in this family of quaternary perovskites, which has been unstable in bulk. We find a gradual expansion of the c-axis lattice parameter with Sn doping, serving as a means to tune chemical pressure and magnetism. This talk will focus on the electronic, magnetic, and magnetotransport properties by the effects of Sn doping in SrRuO3 thin films.

*This work was supported by the U.S. Department of Energy (DOE), Basic Energy Sciences, Materials Sciences and Engineering Division.

Publication: A. Huon et al., Appl. Phys. Lett. 119, 112404 (2021).

Presenters

  • Amanda Huon

    • Oak Ridge National Laboratory
    • University of the Sciences
    • University of the Sciences in Philadelphia

Authors

  • Amanda Huon

    • Oak Ridge National Laboratory
    • University of the Sciences
    • University of the Sciences in Philadelphia
  • Sangmoon Yoon

    • Oak Ridge National Laboratory
  • Michael Fitzsimmons

    • University of Tennessee
  • Jong Mok Ok

    • Oak Ridge National Lab
    • Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
  • Timothy R Charlton

    • Oak Ridge National Lab
  • Clarina R Dela Cruz

    • Oak Ridge National Lab
  • Ho Nyung Lee

    • Oak Ridge National Lab