Controlling the electronic and magnetic properties by Sn substitution in SrRuO<sub>3</sub> epitaxial films

ORAL

Abstract

Controlling the lattice strain in films through chemical substitution has been widely investigated in strongly correlated electronic systems as a means to change electronic and magnetic properties from those of the bulk. Here we present a systematic study on epitaxial SrRu1−xSnxO3 (0 ≤ x ≤ 1) thin films grown by pulsed laser deposition to achieve stable phases in this family of quaternary perovskites, which has been unstable in bulk. We find a gradual expansion of the c-axis lattice parameter with Sn doping, serving as a means to tune chemical pressure and magnetism. This talk will focus on the electronic, magnetic, and magnetotransport properties by the effects of Sn doping in SrRuO3 thin films.

*This work was supported by the U.S. Department of Energy (DOE), Basic Energy Sciences, Materials Sciences and Engineering Division.

Publication: A. Huon et al., Appl. Phys. Lett. 119, 112404 (2021).

Presenters

  • Amanda Huon

    • Oak Ridge National Laboratory
    • University of the Sciences
    • University of the Sciences in Philadelphia

Authors

  • Amanda Huon

    • Oak Ridge National Laboratory
    • University of the Sciences
    • University of the Sciences in Philadelphia
  • Sangmoon Yoon

    • Oak Ridge National Laboratory
  • Michael Fitzsimmons

    • University of Tennessee
  • Jong Mok Ok

    • Oak Ridge National Lab
    • Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
  • Timothy R Charlton

    • Oak Ridge National Lab
  • Clarina R Dela Cruz

    • Oak Ridge National Lab
  • Ho Nyung Lee

    • Oak Ridge National Lab