Color center formation in silicon crystals with intense ion pulses from laser-plasma acceleration
ORAL
Abstract
We report on studies of defect evolution and color center formation in silicon single crystals during the interaction with intense ion pulses from laser-plasma acceleration. Ion pulses, including protons and carbon ions with energies up to several MeV, are generated when fs-laser pulses impinge on thin foils with intensities of ~10^19 W/cm^2 [1]. We characterize ion species and energy distributions and correlate resulting defects and color centers in photoluminescence measurements. W- and G-center type color centers are formed with relative intensities that vary as a function of local ion flux conditions. We use density functional theory to calculate color center linewidths as a function of local disorder. Color centers form when a proton pulse pre-heats a sample, followed a few ns later by implantation and drive-in diffusion of low energy carbon ions. We discuss potential applications of this form of local color center synthesis for the development of spin-photon qubits.
[1] S. Steinke, et al., “Acceleration of high charge ion beams with achromatic divergence by petawatt laser pulses”, Phys. Rev. Accel. and Beams 23,021302 (2020)
[1] S. Steinke, et al., “Acceleration of high charge ion beams with achromatic divergence by petawatt laser pulses”, Phys. Rev. Accel. and Beams 23,021302 (2020)
*The work is supported by the U.S. Department of Energy Office of Science, Office of Fusion Energy Sciences, under Contract No. DEAC02-05CH11231. We acknowledge support through coordinated research project F11020 of the International Atomic Energy Agency (IAEA).
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Presenters
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Thomas Schenkel
- Lawrence Berkeley National Laboratory