Nonvolatile Electric-Field Control of Inversion Symmetry

ORAL

Abstract

In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when these ground states have different crystal symmetries. A key scientific and technological challenge is to stabilize and control coexistence of symmetry-distinct phases with external stimuli. Using BiFeO3 (BFO) layers confined between layers of the dielectric TbScO3 as a model system, we stabilize the phase coexistence of centrosymmetric and non-centrosymmetric BFO phases with antipolar, insulating and polar, semiconducting behavior, respectively at room temperature. Application of in-plane electric fields results in reversible, nonvolatile interconversion between the two phases. This interconversion between the centrosymmetric insulating and non-centrosymmetric semiconducting phases results in a change in the non-linear optical response of over three orders of magnitude and a change in resistivity of over five orders of magnitude. Moreover, this work establishes a mechanism by which to stabilize an antipolar state with an electric field. Our work establishes a materials platform allowing for novel cross-functional devices which take advantage of changes in optical, electrical, and ferroic responses.

Publication: L. Caretta, Y.-T. Shao, J. Yu, A. Mei, B. Grosso, P. Behera, D. Lee, M. McCarter, E. Parsonnet, E., H. K. P., Barnard, A. Raja, L.W. Martin, M. Fiebig, K. Lai, N. Spaldin, D. Muller, D. Schlom, R. Ramesh, Nonvolatile electric-field control of inversion symmetry. Under review (2021)

Presenters

  • Lucas M Caretta

    • University of California, Berkeley

Authors

  • Lucas M Caretta

    • University of California, Berkeley
  • Yu-Tsun Shao

    • Cornell University
  • Jia Yu

    • University of Texas, Austin
    • University of Texas at Austin
  • Antonio B Mei

    • Cornell University
  • Bastien Groso

    • ETH Zurich
  • Piush Behera

    • University of California, Berkeley
    • UC Berkeley
  • Daehun Lee

    • University of Texas at Austin
  • Margaret R McCarter

    • University of California, Berkeley
    • Lawrence Berkeley National Laboratory
  • Eric K Parsonnet

    • University of California, Berkeley
  • Harikrishnan K.P.

    • Cornell University
  • Edward S Barnard

    • Lawrence Berkeley National Laboratory
    • LBNL
    • Berkeley Lab
  • Archana Raja

    • Lawrence Berkeley National Laboratory
  • Lane W Martin

    • University of California, Berkeley
  • Manfred Fiebig

    • ETH Zurich
    • Department of Materials, ETH Zurich, Switzerland
  • Keji Lai

    • University of Texas at Austin
  • Nicola A Spaldin

    • ETH Zurich
    • Department of Materials, ETH Zurich, Switzerland
  • David A Muller

    • Cornell University
    • School of Applied and Engineering Physics, Cornell University
  • Darrell G Schlom

    • Cornell University
  • Ramamoorthy Ramesh

    • University of California, Berkeley