Layer dependent photo-response of Indium Selenide (InSe) field-effect transistors (FETs)

ORAL

Abstract

Recent interest in optoelectronic properties of 2D materials from group III-VI such as Indium Selenide (InSe) has increased due to their direct band gap in few-layered form. Understanding and optimizing the layer dependent properties of these materials is important for developing future optoelectronics devices. Here we report a detailed investigation of layer dependent (thickness 20 < t < 100 nm) photoconductive behavior of InSe based field-effect transistors (FETs). Our investigations indicate maximum responsivities of ~ 7.84 A/W and ~ 0.59 A/W were obtained for the devices with thickness 20 nm and 100 nm, respectively. We will discuss the correlation between layer thickness and figures of merit such as field effect mobility (μFE) and responsivity (R) etc. for the photo-FETs studied.

*This work was supported by the US Army Research Office MURI grant #W911NF-11-1-0362. S.T. and P.P. acknowledges the support from Indo-US Virtual Networked Joint Center Project on 'Light Induced Energy Technologies: Utilizing Promising 2D Nanomaterials (LITE UP 2D)' through the grant number IUSSTF/JC-071/2017. The scanning electron microscope used in this work was purchased through a grant from National Science Foundation (CHE 0959568). M.W. and P.P. acknowledges the College of Science Dissertation Research Award and Graduate School Doctoral Fellowship, respectively, awarded at Southern Illinois University Carbondale (SIUC). L.W. acknowledges support through SIUC's REACH and Energy Boost Awards.

–

Publication: Role of layer thickness and field-effect mobility on photoresponsivity of indium selenide (InSe)-based phototransistors
Milinda Wasala*, Prasanna Patil*, Sujoy Ghosh, Lincoln Weber, Sidong Lei, Saikat Talapatra
Oxford Open Materials Science, Volume 1, Issue 1, 2021, itab010, https://doi.org/10.1093/oxfmat/itab010

Presenters

  • Prasanna D Patil

    • School of Physics and Applied Physics, Southern Illinois University Carbondale, IL-62901, USA.

Authors

  • Prasanna D Patil

    • School of Physics and Applied Physics, Southern Illinois University Carbondale, IL-62901, USA.

  • Milinda P Wasala

    • School of Physics and Applied Physics, Southern Illinois University Carbondale, IL-62901, USA.

  • Sujoy Ghosh

    • Los Alamos National Laboratory
    • School of Physics and Applied Physics, Southern Illinois University Carbondale, IL-62901, USA.

  • Lincoln Weber

    • School of Physics and Applied Physics, Southern Illinois University Carbondale, IL-62901, USA.

  • Sidong Lei

    • Department of Physics and Astronomy, Georgia State University, Atlanta, GA-30303, USA.

  • Saikat Talapatra

    • School of Physics and Applied Physics, Southern Illinois University Carbondale, IL-62901, USA.