Negative Magnetoresistance in Graphene Quantum Dot Devices
ORAL
Abstract
Graphene quantum dot devices have unique transport properties that differ from graphene devices without a quantum dot structure. The opening of a quantum confinement gap and Joule heating of the graphene's electrons lead to an activation energy mediated conductance through the device. Our measurements on these devices in a magnetic field oriented perpendicular to the graphene show a negative magnetoresistance as high as 40% at 1.3 K that decreases with increasing temperature to 5% at 150 K. The activation energies in zero-field and under parallel field are equivalent, indicating that the formation of Landau levels in the graphene is responsible for the magnetoresistance. This opens the possibility to control the level filling with a gate electrode, leading to a tunable magnetoresistance.
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Presenters
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DaVonne Henry
- Georgetown University