Investigating interface effects on the single MoS<sub>2</sub> flake placed on SiO<sub>2</sub> and BN surfaces
ORAL
Abstract
Due to the atomic thickness, electrical properties of two-dimensional (2D) materials such as MoS2 are very sensitive to the interface and the underneath substrate. In previous reports, it was discovered that the MoS2 placed on or sheathed with BN exhibited prominent electrical behaviors. However, the exact comparison of electrical properties of atomic thin MoS2 placed on either BN or SiO2 has not been explored yet. Here we placed the BN flake on the Si wafer capped with 300-nm thick SiO2 and attached a few-layer MoS2 flake with one part on BN and the other part on SiO2 surfaces. The as-attached MoS2 on both BN and SiO2 was processed to make field-effect transistors and properties of electron transport and device performances were measured. Through a systematic study, it is found that the MoS2/BN reveals a much lower Schottky barrier and specific contact resistivity as compared with MoS2/SiO2. For all samples, the MoS2/BN always shows a higher mobility while the temperature behavior presents either ascending or descending mobilities with increasing temperature. The MoS2/BN presents a low interface trap density as well. In summary, the using of BN certainly prohibits some interface disorders coming from SiO2 while there are other intrinsic disorders in MoS2 that could severely degrade electrical properties of the 2D MoS2.
*This work was supported by the Ministry of Science and Technology, Taiwan, under Grant MOST-107-2112-M-009-021-MY3. This work was also financially supported by the "Center for the Semiconductor Technology Research" from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education, Taiwan.
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Publication:H. W. Tu, C. C. Shih, C. L. Lin, M. Z. Yu, J. J. Lai, J. C. Luo, G. L. Lin, W. B. Jian, K. Watanabe, T. Taniguchi, C. Hu, "High Field-Effect Performance and Intrinsic Scattering in The Two-Dimensional MoS2 Semiconductors", Appl. Surf. Sci. 564, 150422 (2021).
Presenters
Wen-Bin Jian
National Yang Ming Chiao Tung University
Authors
Wen-Bin Jian
National Yang Ming Chiao Tung University
Hao-Wei Tu
National Yang Ming Chiao Tung University
Kuan-Cheng Lu
National Yang Ming Chiao Tung University
Chenming Hu
National Yang Ming Chiao Tung University
Kenji Watanabe
National Institute for Materials Science, Tsukuba, Japan
National Institute for Materials Science
NIMS
Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
Research Center for Functional Materials, National Institute for Materials Science
Advanced, Materials Laboratory, NIMS
3 National Institute for Materials Science, Tsukuba, Japan
National Institute for Materials Science; 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
National Institute of Materials Science, Tsukuba, Japan
National Institute of Materials Science
Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
National Institute for Materials Science (Japan)
National Institute for Materials Science, Japan
Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Research Center for Functional Materials
Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
Research Center for Functional Materials, National Institute for Materials Science, Japan
Research Center for Functional Materials, National Institute for Materials Science, 1-1Namiki, Tsukuba 305-0044, Japan
National Institute for Material Science, Japan
National Institute for Material Science
National Institute of Material Sciences, Japan
NIMS, Tsukuba
2National Institute for Materials Science, Namiki 1-1, Ibaraki 305-0044, Japan.
National Institute of Materials Science, Tsukuba, Ibaraki 305-0044, Japan
National Institute for Materials Science Japan
NIMS, Japan
nims
National Institute for Materials Science, Research Center for Functional Materials, Japan
National Institute for Materials Science Tsukuba
National Institute for Materials Science, 1-1 Namiki
National Institute for Materials Science of Japan
National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
NIMS - National Institute for Material Science, Japan
Research Center for Functional Materials, National Institute for Material Science, Tsukuba, Ibaraki, 305-0044, Japan.
National Institute for Material Science, Tsukuba
National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
National Institute for Materials Science (NIMS)
National Institute for Materials Science, Research Center for Functional Materials
Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
National Institute of Material Science
Kyoto Univ
National Institute for Materials Science,1-1 Namiki, Tsukuba, 305-0044, Japan
Takashi Taniguchi
National Institute for Materials Science, Tsukuba, Japan
National Institute for Materials Science
NIMS
Kyoto Univ
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Ibaraki 305-0044, Japan.
3 National Institute for Materials Science, Tsukuba, Japan
National Institute for Materials Science; 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
National Institute of Materials Science, Tsukuba, Japan
National Institute of Materials Science
Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
National Institute for Materials Science (Japan)
International Center for Materials Nanoarchitectonics, National Institute for Materials Science
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Kyoto University
International Center for Materials Nanoarchitectonics
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Japan
International Center for Materials Nanoarchitectonics, National Institute for MaterialsScience, 1-1 Namiki, Tsukuba 305-0044, Japan
National Institute for Material Science, Japan
National Institute for Material Science
National Institute of Material Sciences, Japan
NIMS, Tsukuba
2National Institute for Materials Science, Namiki 1-1, Ibaraki 305-0044, Japan.
National Institute of Materials Science, Tsukuba, Ibaraki 305-0044, Japan
National Institute for Materials Science, Japan
International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan.
NIMS, Japan
National Institute for Materials Science (NIMS)
NIMS. Japan
International Center for Material Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
International Center for Material Nanoarchitectonics, National Institute for Materials Science
National Institute for Materials Science Tsukuba
National Institute for Materials Science, 1-1 Namiki
National Institute for Materials Science of Japan
National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
NIMS - National Institute for Material Science, Japan
International Center for Materials Nanoarchitectonics, National Institute for Material Science, Tsukuba, Ibaraki 305-0044, Japan.
National Institute for Material Science, Tsukuba
National Institute for Materials Science, International Center for Materials Nanoarchitectonics
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
National Institute of Material Science
National Institute for Materials Science,1-1 Namiki, Tsukuba, 305-0044, Japan