Logic-in-memory based on an atomically thin semiconductor

Non-von Neumann architectures are now emerging alternatives to traditional processors for specialized applications where energy efficiency becomes a critical parameter. In particular, brain-inspired architectures show promise in efficiently targeting reconfigurable hardware and matrix-vector computations. Although this is a broad area of research that explores co-designing new systems and devices, a solid material platform that suppresses all technology’s needs has not yet been found. In this regard, two-dimensional materials are a promising class of materials due to their excellent electrical and mechanical properties as well as the emergence of new phenomena that could be exploited to create new non-von Neumann architectures. Here we demonstrate the use of MOCVD grown monolayer MoS₂ as the semiconductor channel for floating-gate memories. We exploit the fabricated memories as a programmable inverter taking advantage of its precise channel’s conductance control. Next, we demonstrate a programmable NOR gate and we further propose an architecture that can produce a complete set of operations. Our results open a new path towards efficient reconfigurable hardware.