Resistivity of doped filled skutterudite compounds: Ce_1-_xPr_xOs₄Sb₁₂ (x=0.1, 0.2)

Through previous experiments, it has been proven that the compound CeOs₄Sb₁₂ exhibits properties of Kondo insulating behavior as well antiferromagnetism below 1 K. This compound has a unique temperature-magnetic field (T-H) phase diagram, indicating valence transitions between Ce³⁺ and Ce⁴⁺ are involved [1,2]. Based on these findings, we are planning on observing the effects of hole doping on valence transitions by the Pr substitution of Ce atoms.  In this report we will present the preliminary data of T dependence of normal-state resistivity at various magnetic fields of Ce_1-xPr_xOs₄Sb_12, where x = 0.1 and 0.2 to monitor the change of phase boundary of valence transitions. Refs: [1] K. Götze et. al, PRB 101, 075102 (2020). [2] P.-C. Ho et. al, PRB 94, 205140 (2016).